october 2010 ?2010 fairchild semiconductor corporation FDMS86322 rev c www.fairchildsemi.com 1 FDMS86322 n-channel powertrench ? mosfet FDMS86322 n-channel powertrench ? mosfet 80 v, 60 a, 7.65 m features max r ds(on) = 7.65 m at v gs = 10 v, i d = 13 a max r ds(on) = 12 m at v gs = 6 v, i d = 7.2 a advanced package and silicon combination for low r ds(on) and high efficiency msl1 robust package design 100% uil tested rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced power trench ? process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application dc-dc conversion g s s s d d d d 5 6 7 8 3 2 1 4 d d d d g s s s pin 1 bottom top power 56 mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking an d ordering information symbol parameter ratings units v ds drain to source voltage 80 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25 c 60 a -continuous (silicon limited) t c = 25 c 83 -continuous t a = 25 c (note 1a) 13 -pulsed 200 e as single pulse avalanche energy (note 3) 135 mj p d power dissipation t c = 25 c 104 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.2 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS86322 FDMS86322 power 56 13 ?? 12 mm 3000 units free datasheet http:///
www.fairchildsemi.com 2 FDMS86322 rev c FDMS86322 n-channel powertrench ? mosfet electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 80 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 66 mv/c i dss zero gate voltage drain current v ds = 64 v, v gs = 0 v 800 na i gss gate to source leakage current, forward v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 2.0 2.9 4.0 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -9 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 13 a 6.1 7.65 m v gs = 6 v, i d = 7.2 a 8.2 12 v gs = 10 v, i d = 13 a, t j = 125 c 10.7 14 g fs forward transconductance v ds = 10 v, i d = 13 a 45 s c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1 mhz 2255 3000 pf c oss output capacitance 460 610 pf c rss reverse transfer capacitance 30 45 pf r g gate resistance 1.0 t d(on) turn-on delay time v dd = 50 v, i d = 13 a, v gs = 10 v, r gen = 6 15 27 ns t r rise time 11 20 ns t d(off) turn-off delay time 27 44 ns t f fall time 713ns q g total gate charge v gs = 0 v to 10 v v dd = 50 v, i d = 13 a 39 55 nc q g total gate charge v gs = 0 v to 5 v 22 31 nc q gs gate to source charge 9.5 nc q gd gate to drain ?miller? charge 10.8 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.7 1.2 v v gs = 0 v, i s = 13 a (note 2) 0.8 1.3 t rr reverse recovery time i f = 13 a, di/dt = 100 a/ s 56 90 ns q rr reverse recovery charge 61 98 nc notes : 1. r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. starting t j = 25 c, l = 0.3 mh, i as = 30 a, v dd = 75 v, v gs = 10 v a. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 125 c/w when mounted on a minimum pad of 2 oz copper.
www.fairchildsemi.com 3 FDMS86322 rev c FDMS86322 n-channel powertrench ? mosfet typical characteristics t j = 25 c unless otherwise noted figure 1. 012345 0 50 100 150 200 v gs = 6 v v gs = 10 v pulse duration = 80 s duty cycle = 0.5% max v gs = 4.5 v v gs = 5 v v gs = 5.5 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 50 100 150 200 0 1 2 3 4 5 v gs =6 v pulse duration = 80 s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 10 v v gs = 4.5 v v gs = 5.5 v v gs =5 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d = 13 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 46810 0 10 20 30 40 i d = 13 a t j = 25 o c t j = 125 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m ) pulse duration = 80 s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 12345678 0 50 100 150 200 v ds = 5 v pulse duration = 80 s duty cycle = 0.5% max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
www.fairchildsemi.com 4 FDMS86322 rev c FDMS86322 n-channel powertrench ? mosfet figure 7. 0 10203040 0 2 4 6 8 10 q g , gate charge (nc) v gs , gate to source voltage (v) i d = 13 a v dd = 50 v v dd = 25 v v dd = 75 v gate charge characteristics figure 8. 0.1 1 10 80 10 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 10 100 1 10 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) 100 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 15 30 45 60 75 90 limited by package r jc = 1.2 o c/w v gs = 6 v v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.01 0.1 1 10 100 400 0.01 0.1 1 10 100 300 dc 10 s 1 s 100 ms 10 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r ja = 125 o c/w t a = 25 o c figure 12. 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 2000 single pulse r ja = 125 o c/w t a = 25 o c v gs = 10 v p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 5 FDMS86322 rev c FDMS86322 n-channel powertrench ? mosfet figure 13. 10 -3 10 -2 10 -1 110 100 1000 0.0005 0.001 0.01 0.1 1 2 single pulse r ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a junction-to-ambient transien t thermal response curve typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 6 FDMS86322 rev c FDMS86322 n-channel powertrench ? mosfet dimensional outline and pad layout
www.fairchildsemi.com FDMS86322 n-channel power trench ? mosfet FDMS86322 rev.c 7 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? auto-spm? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? optihit? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? trifault detect? truecurrent?* serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? t m tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i48 ?
|
